Semiconductor structure with extended contact structure and method for manufacturing the same

A method for manufacturing a semiconductor structure, comprising:

• alternately stacking first semiconductor layers and second semiconductor layers over a substrate;
• patterning the first semiconductor layers and the second semiconductor layers to form a first fin structure;
• removing portions of the second semiconductor layers of the first fin structure to expose the first semiconductor layers;
• implanting first dopants in the first semiconductor layers to form first source/drain regions;
• and
• forming a first contact surrounding the first source/drain regions of the first semiconductor layers.

A semiconductor structure, comprising:

• a substrate;
• nanostructures formed over the substrate, wherein the nanostructures comprise channel regions and source/drain regions;
• a gate structure wrapping around the channel regions of the nanostructures;
• and
• a contact wrapping around the source/drain regions of the nanostructures.