Metal-oxide-semiconductor transistor and method of fabricating the same

A method of fabricating a metal-oxide-semiconductor transistor, comprising:

• providing a substrate, the substrate having a plurality of trenches extending along a first direction and located on a top portion of the substrate;
• forming a gate structure line on the substrate, the gate structure line extending along a second direction intersecting with the first direction and crossing over the plurality of trenches;
• performing implantation on the substrate to form a first doped line and a second doped line in the substrate, the first doped line and the second doped line extending along the second direction intersecting with the first direction and crossing over the plurality of trenches;
• and
• forming a gate structure line located on the substrate, extending along the second direction, and crossing over the plurality of trenches, wherein the first doped line is located at a first side of the gate structure line, and the second doped line is located at a second side of the gate structure line.