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US 2020/0266263 A1Published application
Method of forming a semiconductor device and structure therefor
AssigneeSemiconductor Components Industries, LLC
InventorsArash ELHAMI KHORASANI, Mark GRISWOLD
Life of this patent
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Abstract
In an embodiment, a semiconductor device includes a resistor that overlies a doped region of the semiconductor device. The resistor is formed into a pattern of a polygon spiral. An embodiment of the pattern of the resistor includes sides and corners. The material of the sides has a low resistivity and the material of the corners has a higher resistivity.
Claims20
A semiconductor device having a high voltage resistor element comprising:
- a semiconductor substrate having a first conductivity type;
- a first doped region of a second conductivity type on a first portion of the semiconductor substrate wherein the first doped region forms a drift region of a transistor;
- a second doped region of the second conductivity type in the semiconductor substrate and spaced apart from the first doped region wherein the second doped region forms another region of the transistor;
- an insulator overlying the first doped region;
- and
- a resistor overlying the insulator, the resistor formed in a rectangular spiral shape having a plurality of revolutions, each revolution having sides and curved corners that connect the sides, the curved corners formed from a first semiconductor material having a first resistivity and the sides formed from a second semiconductor material having a second resistivity wherein the first resistivity is at least one hundred times the second resistivity.
3 more elements
A method of forming a resistor of a semiconductor device comprising:
- providing a semiconductor substrate having a first conductivity type;
- forming a first doped region of a second conductivity type on a first portion of the semiconductor substrate;
- forming an insulator overlying the first doped region;
- and
- forming a resistor overlying the insulator and the first doped region including forming the resistor in a polygon spiral shape having a plurality of revolutions with each revolution having sides and corners, including forming the corners from a resistive material having a first resistivity and forming the sides from a second material having a lower resistivity.
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A method of forming a resistor of a semiconductor device comprising:
- providing a semiconductor substrate having a first conductivity type;
- forming a first doped region of a second conductivity type on a first portion of the semiconductor substrate;
- forming an insulator overlying the first doped region;
- and
- forming a material overlying the insulator and the first doped region including forming the material as an elongated element that is formed in a pattern of a spiral having a plurality of revolutions wherein each revolution has sides and a corner that interconnects two of the sides, including forming the corner from a first material having a first resistivity and forming the sides from a second material having a lower resistivity.
2 more elements
Dependencies are inferred from the claim text.