Semiconductor device having 3d inductor and method of manufacturing the same
AssigneeChipbond Technology Corporation
InventorsCheng-Hung Shih, Nian-Cih Yang, Yi-Cheng Chen, Shang-Jan Yang
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Abstract
A semiconductor device having 3D inductor includes a first transverse inductor, a longitudinal inductor and a second transverse inductor. The first transverse inductor is formed on a first substrate, the second transverse inductor and the longitudinal inductor are formed on a second substrate. The second substrate is bonded to the first substrate to connect the first transverse inductor and the longitudinal inductor such that the first transverse inductor, the longitudinal inductor and the second transverse inductor compose a 3D inductor.
Claims18
A semiconductor device, comprising:
- a first substrate including a first conductive pad and a second conductive pad;
- a first transverse inductor located on the first substrate and including a plurality of first inductor portions, the first inductor portions are arranged on the first substrate radially and each include a first exterior end and a first interior end, wherein one of the first inductor portions is connected to the first conductive pad, and another one of the first inductor portions is connected to the second conductive pad;
- a longitudinal inductor located on the first transverse inductor and including a supportive layer, a plurality of exterior inductor portions and a plurality of interior inductor portions, the supportive layer includes a plurality of exterior openings and a plurality of interior openings, the exterior and interior inductor portions are located in the exterior and interior openings, respectively;
- a second transverse inductor located on the longitudinal inductor and including an insulation layer and a plurality of second inductor portions, the insulation layer includes a plurality of openings arranged radially, the second inductor portions are located in the openings, arranged radially and each include a second exterior end and a second interior end, wherein both ends of each of the exterior inductor portions are connected to the first exterior end of the first inductor portions and the second exterior end of the second inductor portions, respectively, both ends of each of the interior inductor portions are connected to the first interior end of the first inductor portions and the second interior end of the second inductor portions, respectively, and the exterior and interior inductor portions connected to the same second inductor portion are connected to two of the adjacent first inductor portions, respectively;
- and
- a second substrate located on the second transverse inductor.
A method of manufacturing a semiconductor device, comprising:
- forming a first transverse inductor on a first substrate, the first substrate includes a first conductive pad and a second conductive pad, the first transverse inductor includes a plurality of first inductor portions which are formed on the first substrate radially and each include a first exterior end and a first interior end, wherein one of the first inductor portions is connected to the first conductive pad and another one of the first inductor portions is connected to the second conductive pad;
- forming a second transverse inductor on a second substrate, the second transverse inductor includes an insulation layer and a plurality of second inductor portions, the insulation layer is formed on the second substrate and includes a plurality of openings arranged radially;
- the second inductor portions are formed in the openings, arranged radially and each include a second exterior end and a second interior end;
- forming a longitudinal inductor on the second transverse inductor, the longitudinal inductor includes a supportive layer, a plurality of exterior inductor portions and a plurality of interior inductor portions, the supportive layer is formed on the second transverse inductor and includes a plurality of exterior openings and a plurality of interior openings, the second exterior end and the second interior end of the second inductor portions are exposed by the exterior openings and the interior openings, respectively, the exterior inductor portions are formed in the exterior openings to connect to the second exterior end of the second inductor portions, and the interior inductor portions are formed in the interior openings to connect to the second interior end of the second inductor portions;
- and
- bonding the longitudinal inductor and the first transverse inductor, the exterior inductor portions and the interior inductor portions are connected to the first exterior end and the first interior end of the first inductor portions, respectively, wherein the exterior and interior inductor portions connected to the same second inductor portion are connected to two of the adjacent first inductor portions, respectively.
Dependencies are inferred from the claim text.