US 2020/0266240 A1Published application

Semiconductor module and power conversion apparatus

AssigneeMitsubishi Electric Corporation

InventorsShota MORISAKI, Yoshiko TAMADA, Junichi NAKASHIMA, Daisuke OYA

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Abstract

An emitter interconnection connecting the emitter of a semiconductor switching element to a negative electrode is different in one or both of length and width from an emitter interconnection connecting the emitter of a semiconductor switching element to the negative electrode. At the time of switching, an induced electromotive force is generated at a gate control wire, or at a gate pattern, or at an emitter wire, by at least one of a current flowing through a positive electrode and a current flowing through the negative electrode, so as to reduce the difference between the emitter potential of the semiconductor switching element and the emitter potential of the semiconductor switching element caused by the difference.

Claims19

Dependent claims

A semiconductor module comprising:

an insulating plate;
a positive electrode;
a negative electrode;
a first semiconductor switching element and a second semiconductor switching element provided on the insulating plate and connected in parallel between the positive electrode and the negative electrode;
a gate control electrode configured to control a gate of the first semiconductor switching element and a gate of the second semiconductor switching element;
a gate pattern connected to the gate control electrode;
a first gate control wire connecting the gate of the first semiconductor switching element to the gate pattern;
a second gate control wire connecting the gate of the second semiconductor switching element to the gate pattern;
an emitter pattern connected to the negative electrode;
a first emitter wire connecting an emitter of the first semiconductor switching element to the emitter pattern;
and
a second emitter wire connecting an emitter of the second semiconductor switching element to the emitter pattern,
a first emitter interconnection connecting the emitter of the first semiconductor switching element to the negative electrode being different in one or both of length and width from a second emitter interconnection connecting the emitter of the second semiconductor switching element to the negative electrode,
at a time of switching, an induced electromotive force being generated at the first gate control wire and the second gate control wire, or at the gate pattern, or at the first emitter wire and the second emitter wire, by at least one of a current flowing through the positive electrode and a current flowing through the negative electrode, so as to reduce a difference between an emitter potential of the first semiconductor switching element and an emitter potential of the second semiconductor switching element caused by the difference.

11 more elements

A semiconductor module comprising:

an insulating plate;
a positive electrode;
a negative electrode;
a first semiconductor switching element and a second semiconductor switching element provided on the insulating plate and connected in parallel between the positive electrode and the negative electrode;
a gate control electrode configured to control a gate of the first semiconductor switching element and a gate of the second semiconductor switching element;
a gate pattern connected to the gate control electrode;
a first gate control wire connecting the gate of the first semiconductor switching element to the gate pattern;
a second gate control wire connecting the gate of the second semiconductor switching element to the gate pattern;
an emitter pattern connected to the negative electrode;
a first emitter wire connecting an emitter of the first semiconductor switching element to the emitter pattern;
a second emitter wire connecting an emitter of the second semiconductor switching element to the emitter pattern;
an emitter control electrode configured to control the emitter of the first semiconductor switching element and the emitter of the second semiconductor switching element;
an emitter control pattern connected to the emitter control electrode;
a first emitter control wire connecting the emitter of the first semiconductor switching element to the emitter control pattern;
and
a second emitter control wire connecting the emitter of the second semiconductor switching element to the emitter control pattern,
a first emitter interconnection connecting the emitter of the first semiconductor switching element to the negative electrode being different in one or both of length and width from a second emitter interconnection connecting the emitter of the second semiconductor switching element to the negative electrode,
at a time of switching, an induced electromotive force being generated at the first emitter control wire and the second emitter control wire, by at least one of a current flowing through the positive electrode and a current flowing through the negative electrode, so as to reduce a difference between an emitter potential of the first semiconductor switching element and an emitter potential of the second semiconductor switching element caused by the difference.

15 more elements

Dependencies are inferred from the claim text.

Facts

Application: 16/488,752Filed 11 Apr 2018
Priority: JP 2017-08308819 Apr 2017
Published: 20 Aug 2020
Term ends: Not estimatedThe source records don’t support an estimate.

Classification21 codes

H10W 90/00
Package configurations
H02M 7/48
By static converters: using discharge tubes with control electrode or semiconductor devices with control electrode
H10B 12/0385
The capacitor being in a trench in the substrate: making a connection between the transistor and the capacitor, e.g. buried strap
H10D 12/411
Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]: insulated-gate bipolar transistors [IGBT]