Top pinned mtj stack with synthetic anti-ferromagnetic free layer and aln seed layer

A spin-transfer torque magnetoresistive random access memory (STT MRAM) comprising:

• a top pinned magnetic tunnel junction (MTJ) stack located between a bottom electrode and a top electrode, wherein the top pinned MTJ stack comprises:
• a magnetic free layer stack located on an insulating aluminum nitride seed layer having hexagonal symmetry, wherein the magnetic free layer stack includes a first magnetic layer, a synthetic anti-ferromagnetic coupling layer, and a second magnetic layer, wherein the first magnetic layer of the magnetic free layer stack has hexagonal symmetry, and the second magnetic layer of the magnetic free layer stack comprises a lower region having hexagonal symmetry and an upper region that has cubic symmetry or is amorphous;
• a tunnel barrier layer having cubic symmetry located on the second magnetic layer of the magnetic free layer stack;
• and
• a magnetic pinned layer located on the tunnel barrier layer.