Micro light-emitting diode and manufacturing method of micro light-emitting diode
AssigneeSharp Kabushiki Kaisha
InventorsKATSUJI IGUCHI, HIDENORI KAWANISHI
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Abstract
A micro light-emitting diode includes a first micro light-emitting diode including a first light-emitting layer and emitting light at a first wavelength, and a second micro light-emitting diode including the first light-emitting layer and a second light-emitting layer emitting light at a second wavelength longer than the first wavelength, in which the second light-emitting layer is a nitride semiconductor layer doped with a second rare earth element, and a nitride semiconductor of the first micro light-emitting diode and the nitride semiconductor of the second micro light-emitting diode are separated from each other.
Claims14
A micro light-emitting diode comprising:
- a first micro light-emitting diode including a first light-emitting layer that emits light of a first wavelength and emitting light at the first wavelength;
- and
- a second micro light-emitting diode including the first light-emitting layer and a second light-emitting layer that emits light of a second wavelength longer than the first wavelength, and emitting light at the second wavelength,
- wherein the first micro light-emitting diode and the second micro light-emitting diode are both made of a nitride semiconductor,
- the second light-emitting layer is a nitride semiconductor layer doped with a second rare earth element, and
- the nitride semiconductor of the first micro light-emitting diode and the nitride semiconductor of the second micro light-emitting diode are separated from each other.
A micro light-emitting diode comprising:
- a first micro light-emitting diode that includes a first light-emitting layer containing a first rare earth element and emits light at a first wavelength;
- and
- a second micro light-emitting diode that includes a second light-emitting layer containing a second rare earth element and emits light at a second wavelength longer than the first wavelength,
- wherein the first micro light-emitting diode and the second micro light-emitting diode are both made of a nitride semiconductor, and
- the first light-emitting layer and the second light-emitting layer are both covered with an electrode layer in plan view.
A manufacturing method of a micro light-emitting diode comprising:
- forming a nitride semiconductor layer including a first light-emitting layer that emits light of a first wavelength and a second light-emitting layer that is formed by doping a second rare earth element and emits light of a second wavelength longer than the first wavelength;
- and
- separating the nitride semiconductor layer formed in the forming the nitride semiconductor layer into a first micro light-emitting diode that includes the first light-emitting layer and emits light at the first wavelength and a second micro light-emitting diode that includes the first light-emitting layer and the second light-emitting layer and emits light at the second wavelength.
A manufacturing method of a micro light-emitting diode comprising:
- forming a first micro light-emitting diode that includes a first light-emitting layer containing a first rare earth element and emits light at a first wavelength, with a nitride semiconductor;
- forming a second micro light-emitting diode that includes a second light-emitting layer containing a second rare earth element and emits light at a second wavelength longer than the first wavelength, with a nitride semiconductor;
- and
- covering the first light-emitting layer and the second light-emitting layer with an electrode layer in plan view.
Dependencies are inferred from the claim text.