Image sensor with improved quantum efficiency surface structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYun-Wei CHENG, Chun-Hao Chou, Kuo-Cheng Lee, Hsun-Ying Huang, Shih-Hsun Hsu
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Abstract
The present disclosure relates to a semiconductor image sensor with improved quantum efficiency. The semiconductor image sensor can include a semiconductor layer having a first surface and a second surface opposite of the first surface. An interconnect structure is disposed on the first surface of the semiconductor layer, and radiation-sensing regions are formed in the semiconductor layer. The radiation-sensing regions are configured to sense radiation that enters the semiconductor layer from the second surface and groove structures are formed on the second surface of the semiconductor layer.
Claims20
A method of forming a semiconductor image sensor device, the method comprising:
- forming photodiodes in a semiconductor layer having a first side and a second side opposite of the first side;
- forming at least one interconnect structure on the second side of the semiconductor layer;
- depositing and patterning a hard mask layer over the first side of the semiconductor layer, wherein the patterned hard mask layer exposes portions of the first side;
- performing a first etching process on the exposed portions of the first side to form a plurality of trenches in the first side;
- and
- performing a second etching process on the exposed portions of the first side to form a plurality of grooves on the first side.
A method, comprising:
- forming light sensors in a semiconductor layer, the semiconductor layer having a front side and a back side opposite to the front side;
- disposing a multilayer interconnect structure over the back side of the semiconductor layer;
- etching the front side of the semiconductor layer to form isolation trenches;
- etching the front side of the semiconductor layer to form groove structures with a rectangular shape;
- and
- filling the isolation trenches and the groove structures with a same dielectric material.
A method, comprising:
- forming radiation-detection devices in a semiconductor layer, the semiconductor layer comprising a first surface and a second surface opposite to the first surface;
- disposing an interconnect layer on the second surface of the semiconductor layer;
- etching the first surface of the semiconductor layer between the radiation-detection devices to form isolation structures;
- and
- etching the first surface of the semiconductor layer over the radiation-detection devices to form groove structures, wherein the groove structures and the radiation-detection devices are between the isolation structures.
Dependencies are inferred from the claim text.