Semiconductor structure and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSHI NING JU, KUO-CHENG CHIANG, KUAN-LUN CHENG, CHIH-HAO WANG, KUAN-TING PAN, ZHI-CHANG LIN
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Abstract
The present disclosure provides a semiconductor structure and a method for manufacturing a semiconductor structure. The semiconductor structure includes a substrate, a transistor on the substrate, and an isolation structure. The transistor includes an epitaxial region on the substrate, having a first side boundary and a second side boundary opposite to the first side boundary, wherein the first side boundary of the epitaxial region is conformal to a sidewall of the isolation structure.
Claims21
A semiconductor structure, comprising:
- a substrate;
- a transistor on the substrate, the transistor comprising:
- an epitaxial region on the substrate, having a first side boundary and a second side boundary opposite to the first side boundary;
- and
- an isolation structure on the substrate, the first side boundary of the epitaxial region being conformal to a sidewall of the isolation structure.
A semiconductor structure, comprising:
- a substrate;
- a plurality of fin structures extending along a first direction over the substrate;
- a plurality of low-k isolation strips extending along the first direction over the substrate and disposed alternately between the plurality of fin structures;
- a plurality of high-k isolation segments disposed on the plurality of low-k isolation strips;
- and
- a plurality of gate structures surrounding the plurality of low-k isolation strips and the plurality of high-k isolation segments.
15-20. (canceled)
A semiconductor structure, comprising:
- a substrate fin;
- a plurality of nanowires stacked over the substrate fin;
- a first low-k isolation strip adjacent to the substrate fire and the plurality of nanowires;
- and
- an inner spacer interposing an upper portion of the first low-k isolation strip and the plurality of nanowires and interposing adjacent two of the nanowires.
Dependencies are inferred from the claim text.