Method of forming a semiconductor device and structure therefor
AssigneeSemiconductor Components Industries, LLC
InventorsAmit PAUL, Arash ELHAMI KHORASANI, Mark GRISWOLD
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Abstract
In an embodiment, a semiconductor device includes a resistor that overlies a doped region of the semiconductor device. The resistor is formed as an elongated element that is formed into a pattern of a spiral. An embodiment of the pattern of the resistor includes a plurality of revolutions from the starting point to an ending point. The resistor material has one of a separation distance between adjacent revolutions that increases with distance along a periphery of the resistor material or a width of the resistor material that increases with distance along the periphery of the resistor material.
Claims20
A semiconductor device having a high voltage resistor element comprising:
- a semiconductor substrate having a first conductivity type;
- a first doped region of a second conductivity type on a first portion of the semiconductor substrate wherein the first doped region forms either a drift region of a transistor or portion of a P-N junction of a diode;
- a second doped region of the second conductivity type in the semiconductor substrate and spaced apart from the first doped region wherein the second doped region forms either another region of the transistor or a contact region for the diode;
- an insulator overlying the first doped region;
- and
- a resistor overlying the insulator, the resistor formed from a semiconductor material formed in an elongated shape with portions that are spaced laterally apart from each other to form a space between the portions so that the elongated shape forms a spiral wherein the space increases with distance along a periphery of the elongated shape from a starting point to an ending point of the elongated shape, wherein the starting point is at an inner portion of the elongated shape and the ending point is at an opposite end of the elongated shape.
A method of forming a resistor of a semiconductor device comprising:
- providing a semiconductor substrate having a first conductivity type;
- forming a first doped region of a second conductivity type on a first portion of the semiconductor substrate;
- forming a second doped region of the second conductivity type in the semiconductor substrate and spaced apart from the first doped region;
- forming an insulator overlying the first doped region;
- forming a resistor overlying the insulator and the first doped region including forming a resistor material as an elongated element that is formed in a pattern of either a substantially circular spiral or a substantially polygonal spiral having curved corners having an arc shape, the pattern extending from a starting point at an interior of the pattern in a plurality of revolutions that increase in distance from the starting point to an ending point, including forming the resistor material to have one of a separation distance between adjacent revolutions that increases with distance along a periphery of the resistor material or a width of the resistor material that increases with distance along the periphery of the resistor material.
A method of forming a resistor of a semiconductor device comprising:
- providing a semiconductor substrate having a first conductivity type;
- forming a first doped region of a second conductivity type on a first portion of the semiconductor substrate;
- forming an insulator overlying the first doped region;
- and
- forming a resistor overlying the insulator and the first doped region including forming a resistor material as an elongated element that is formed in a pattern of a spiral, the pattern extending from a starting point at an interior of the pattern in a plurality of revolutions from the starting point to an ending point, including forming the resistor material to have one of a separation distance between adjacent revolutions that increases with distance along a periphery of the resistor material or a width of the resistor material that increases with distance along the periphery of the resistor material.
Dependencies are inferred from the claim text.