Semiconductor Structure and Manufacturing Method Thereof

A method for manufacturing a semiconductor device, the method comprising:

• depositing a first dielectric material over a semiconductor structure, the semiconductor structure comprising:
• a gate structure;
• a gate spacer along a sidewall of the gate structure;
• and
• a source drain structure adjacent to the gate spacer, wherein the first dielectric material is deposited over the gate structure, the gate spacer, and the source drain structure;
• forming a recess in the first dielectric material directly over the source drain structure, wherein after the recess is formed, a first portion of the first dielectric material underlies the recess and covers the source drain structure, a first portion of the gate spacer has a sloped sidewall, and a second portion of the gate spacer has a straight sidewall;
• forming a protection layer lining sidewalls and a bottom of the recess;
• performing an anisotropic etching process to deepen the recess, wherein the source drain structure is exposed after the anisotropic etching process;
• and
• filling the deepened recess with a first conductive material to form a bottom conductor.

A method for manufacturing a semiconductor device, the method comprising:

• forming a first dielectric layer over a gate structure, over a source/drain region adjacent to the gate structure, and over a gate spacer that extends along a sidewall of the gate structure, wherein the first dielectric layer over the source/drain region extends closer to a substrate of the semiconductor device than the first dielectric layer over the gate structure;
• patterning the first dielectric layer to form a recess over the source/drain region, wherein the patterning removes a top corner of the gate spacer proximate to an upper surface of the gate structure, wherein after the patterning, the gate spacer has a sloped sidewall and a straight sidewall, and a first portion of the first dielectric layer underlies the recess;
• lining sidewalls and a bottom of the recess with a protection layer after the patterning;
• performing an etching process to deepen the recess and to expose the source/drain region;
• and
• forming a bottom conductor in the recess.