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US 2020/0266142 A1Published application
Semiconductor device and manufacturing method thereof
AssigneeSK hynix Inc.
InventorKi Hong LEE
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a wiring structure, a stacked structure located over the wiring structure, channel structures passing through the stacked structure, contact plugs passing through the stacked structure and electrically connected to the wiring structure, and insulating spacers each including loop patterns surrounding a sidewall of each of the contact plugs and stacked along the sidewall of each of the contact plugs.
Claims20
A semiconductor device, comprising:
- a wiring structure;
- a stacked structure formed over the wiring structure;
- channel structures passing through the stacked structure;
- contact plugs passing through the stacked structure, the contact plugs being electrically connected to the wiring structure;
- and
- insulating spacers, each including loop patterns surrounding a sidewall of each contact plug and stacked along the sidewall of each contact plug.
3 more elements
A semiconductor device, comprising:
- a stacked structure;
- plugs passing through the stacked structure in a stacking direction;
- and
- spacers each including loop patterns surrounding each of the plugs and stacked along a sidewall of each of the plugs,
- wherein loop patterns of neighboring spacers are coupled to each other.
2 more elements
Dependencies are inferred from the claim text.