Redistribution substrate, method of manufacturing the same, and semiconductor package including the same
AssigneeSamsung Electronics Co., Ltd.
InventorSeokhyun LEE
Life of this patent
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Abstract
A redistribution substrate includes a first conductive pattern including a first lower pad and a second lower pad, the first and second lower pads being within a first insulating layer, a second conductive pattern including a first upper pad and a second upper pad, the first and second upper pads being on the first insulating layer, a first via connecting the first lower pad and the first upper pad to each other in the first insulating layer, a second via connecting the second lower pad and the second upper pad to each other in the first insulating layer, and a capacitor between the first lower pad and the first via.
Claims27
A redistribution substrate, comprising:
- a first conductive pattern including a first lower pad and a second lower pad, the first and second lower pads being within a first insulating layer;
- a second conductive pattern including a first upper pad and a second upper pad, the first and second upper pads being on the first insulating layer;
- a first via connecting the first lower pad and the first upper pad to each other in the first insulating layer;
- a second via connecting the second lower pad and the second upper pad to each other in the first insulating layer;
- and
- a capacitor between the first lower pad and the first via.
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A redistribution substrate, comprising:
- a first conductive pattern;
- a first via connected to a top surface of the first conductive pattern;
- a capacitor between the first conductive pattern and the first via;
- a second conductive pattern on the first via, the second conductive pattern including an upper pad connected to the first via and a plurality of upper connection lines spaced apart from the upper pad;
- and
- a second via connected to a top surface of the upper pad,
- wherein the capacitor includes a barrier layer, a dielectric layer, and a top electrode that are sequentially stacked on the top surface of the first conductive pattern.
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Dependencies are inferred from the claim text.