Semiconductor storage device and inspection method

A semiconductor storage device comprising:

• a stacked body including a plurality of conductive layers stacked via insulating layers, the stacked body being provided with a step portion in which end portions of the plurality of conductive layers have a stepwise shape;
• a plurality of pillars extending in the stacked body in a stacking direction of the stacked body, and forming a plurality of memory cells at intersection portions with at least part of the plurality of conductive layers;
• a plurality of contacts disposed for respective steps of the step portion, and to be electrically connected with the conductive layers of the respective steps;
• an upper wire layer including a first upper wire and a second upper wire disposed in a same hierarchy;
• a first connection portion disposed between the firs upper wire and a first contact connected to an (n−1)-th (n is an integer of two or more) conductive layer from an undermost layer among the plurality of contacts;
• and
• a second connection portion disposed between the second upper wire and a second contact connected to an n-th conductive layer from the undermost layer among the plurality of contacts,
• wherein the second connection portion includes a plug member extending in the stacking direction between a first level and a second level in the stacking direction, and formed by one body, and
• wherein the first connection portion includes a first lower plug member extending in the stacking direction between the first level and a third level in the stacking direction, and a first upper plug member extending in the stacking direction between the third level and the second level in the stacking direction, the third level is positioned between the first level and the second level in the stacking direction and the first lower plug member and the first upper plug member are formed by a body different from each other, and one ends of the first lower plug member and the first upper plug member are coupled.

An inspection method to be executed in a manufacturing process of a semiconductor storage device including:

• a stacked body including a plurality of conductive layers stacked via insulating layers, the stacked body being provided with a step portion in which end portions of the plurality of conductive layers have a stepwise shape;
• a plurality of pillars extending in the stacked body in a stacking direction of the stacked body, and forming a plurality of memory cells at intersection portions with at least part of the plurality of conductive layers;
• and
• a plurality of contacts disposed for respective steps of the step portion, and to be electrically connected with the conductive layers of the respective steps,
• the inspection method comprising:
• emitting an electron beam to:
• a first contact connected to an (n−1)-th (n is an integer of two or more) conductive layer from an undermost layer among the plurality of contacts, and having a plug exposed to a surface layer that is disposed on a top surface of the first contact;
• a second contact connected to an n-th conductive layer from the undermost layer among the plurality of contacts, and having a top surface covered by an insulating layer;
• and
• a third contact connected to an (n+1)-th conductive layer from the undermost layer among the plurality of contacts, and having a plug exposed to a surface layer that is disposed on a top surface of the third contact;
• and
• determining whether a short circuit is generated between hierarchies on at least the n-th conductive layer connected to the second contact, based on potential contrast generated in the first contact, the second contact, and the third contact.