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US 2020/0266089 A1Published application
Carrier and method for manufacturing semiconductor device
AssigneesKabushiki Kaisha Toshiba, Kioxia Corporation
InventorsKazuo SHIMOKAWA, Takayuki TAJIMA
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Abstract
According to one embodiment, a carrier includes a support substrate; a release layer provided on the support substrate; a first adhesion layer provided between the support substrate and the release layer; and a protective layer provided between the support substrate and the first adhesion layer. A thickness of the protective layer is thicker than a thickness of the release layer and a thickness of the first adhesion layer.
Claims11
A carrier, comprising:
- a support substrate;
- a release layer provided on the support substrate;
- a first adhesion layer provided between the support substrate and the release layer;
- and
- a protective layer provided between the support substrate and the first adhesion layer, a thickness of the protective layer being thicker than a thickness of the release layer and a thickness of the first adhesion layer.
2 more elements
A method for manufacturing a semiconductor device, comprising:
- preparing a carrier, the carrier including a support substrate, a release layer provided on the support substrate, and a protective layer provided between the support substrate and the release layer;
- forming a resin plate on the release layer, the resin plate including a semiconductor element and a resin material covering the semiconductor element;
- forming a fracture portion in the carrier by fracturing the release layer in a thickness direction, the fracture portion reaching the protective layer but not reaching the support substrate;
- and
- peeling the support substrate from the resin plate by using the fracture portion as a starting point.
2 more elements
Dependencies are inferred from the claim text.