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AssigneeMagtera, Inc.
InventorBoris G. Tankhilevich
Estimating the term…
An apparatus for novel technique of high-speed magnetic recording based on manipulating pinning layer in magnetic tunnel junction-based memory by using terahertz magnon laser is provided. The apparatus comprises a terahertz writing head configured to generate a tunable terahertz writing signal and a memory cell including a spacer that comprises a thickness configured based on Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction. The memory cell comprises two separate memory states: a first binary state and a second binary state; wherein the first binary memory state corresponds to a ferromagnetic sign of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction corresponding to a first thickness value of the spacer; and wherein the second binary memory state corresponds to an antiferromagnetic sign of the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction corresponding to a second thickness value of the spacer. The thickness of the spacer is manipulated by the tunable terahertz writing signal.
An apparatus comprising:
A method of magnetic recording by employing a memory cell, comprising a bottom electrode coupled to a substrate, an antiferromagnetic layer coupled to said bottom electrode, a pinned layer that comprises a first ferromagnetic material in contact with said antiferromagnetic layer to configure a fixed magnetization direction of said pinned layer, a tunnel junction coupled to said pinned layer, a spacer that comprises a thickness configured based on Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction, a free layer that comprises a second ferromagnetic material configured to be magnetized in a first magnetized direction or a second magnetized direction based on said RKKY interaction, and a top electrode coupled to said free layer, said method comprising:
Dependencies are inferred from the claim text.