Image sensor with boosted photodiodes for time of flight measurements

A method of operation for an image sensor, the method comprising:

• selectively applying a bias to a first doped region of a first junction capacitor, a second doped region of a second junction capacitor, a third doped region of a third junction capacitor, and a fourth doped region of a fourth junction capacitor to couple a junction capacitance of each of the first junction capacitor, the second junction capacitor, the third junction capacitor, and the fourth junction capacitor to a photodiode;
• and
• selectively enabling a first vertical transfer gate, a second vertical transfer gate, a third vertical transfer gate, and a fourth vertical transfer gate to transfer an electric signal generated by the photodiode in response to incident image light to a respective one of a first storage node, a second storage node, a third storage node, and a fourth storage node, wherein the junction capacitance provides an electric field to drive the electric signal from the photodiode to the respective one of the first storage node, the second storage node, the third storage node, and the fourth storage node.