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US 2020/0263304 A1Published application
Polycrystalline silicon manufacturing apparatus
AssigneeShin-Etsu Chemical Co., Ltd.
InventorsNaruhiro Hoshino, Tetsuro Okada, Masahiko Ishida
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Abstract
An integrated sleeve structure is provided between an electrode configured to feed power to a silicon core wire and a bottom plate part. Sealing members are arranged on at least part of a flange part of an insulating member and on at least part of a straight part of the insulating member.
Claims4
A polycrystalline silicon manufacturing apparatus, using Siemens method, comprising:
- an insulating member having an integrated sleeve structure provided between an electrode configured to feed power to a silicon core wire and a bottom plate part,
- wherein
- the insulating member has a shape provided with a flange part at an upper part of a straight part,
- at least part of the flange part of the insulating member is fit between a lower surface of a flange part of the electrode and an upper surface of the bottom plate part, and at least part of the straight part of the insulating member is fit between a straight part of the electrode and a side surface of a through-hole part provided in the bottom plate part, and
- sealing members are arranged on at least two areas of the insulating member.
2 more elements
Dependencies are inferred from the claim text.