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US 2020/0263295 A1Published application
Film forming method, method for cleaning processing chamber for film formation, and film forming apparatus
AssigneeTokyo Electron Limited
InventorsTakahiro MIYAHARA, Susumu YAMAUCHI
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Abstract
A film forming method is provided. In the film forming method, a gas of a carbon precursor containing an organic compound having an unsaturated carbon bond is supplied to a substrate, and a gas of a silicon precursor containing a silicon compound is supplied to the substrate. Further, a carbon-silicon containing film is formed on the substrate by thermally reacting the carbon precursor with the silicon precursor at a temperature lower than 800° C.
Claims16
A film forming method comprising:
- supplying a gas of a carbon precursor containing an organic compound having an unsaturated carbon bond to a substrate;
- supplying a gas of a silicon precursor containing a silicon compound to the substrate;
- and
- forming a carbon-silicon containing film on the substrate by thermally reacting the carbon precursor with the silicon precursor at a temperature lower than 800° C.
1 more element
A film forming apparatus comprising:
- a processing chamber in which a mounting table configured to mount thereon a substrate is disposed;
- a carbon precursor supply unit configured to supply a gas of a carbon precursor containing an organic compound having an unsaturated carbon bond to the processing chamber;
- a silicon precursor supply unit configured to supply a gas of a silicon precursor containing a silicon compound to the processing chamber;
- and
- a heating unit configured to thermally react the carbon precursor and the silicon precursor supplied to the processing chamber at a temperature lower than 800° C. to thereby form a carbon-silicon containing film on the substrate.
2 more elements
Dependencies are inferred from the claim text.