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US 2020/0262000 A1Published application
Low Temperature Direct Bonding Of Aluminum Nitride To AlSiC Substrates
AssigneeGeorgia Tech Research Corporation
InventorsWaylon Puckett, Darshan G. Pahinkar, Samuel Graham
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Abstract
Disclosed herein are power electronic modules formed by directly bonding a heat sink to a dielectric substrate using transition liquid phase bonding.
Claims22
A method of manufacturing a power electronic module comprising:
- selecting a dielectric substrate having an effective thermal conductivity;
- selecting a heat sink having an effective thermal conductivity;
- selecting an interlayer material having an effective thermal conductivity;
- and
- bonding the dielectric substrate and the heat sink via the interlayer material;
- wherein the effective thermal conductivity of the interlayer material is at least 69% of each of the effective thermal conductivities of the dielectric substrate and the heat sink.
3 more elements
9-12. (canceled)
20-21. (canceled)
Dependencies are inferred from the claim text.