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US 2020/0249573 A1Published application
Composition for resist underlayer film formation, underlayer film for lithography, and pattern formation method
AssigneeMitsubishi Gas Chemical Company, Inc.
InventorsTakumi TOIDA, Takashi MAKINOSHIMA, Takashi SATO, Masatoshi ECHIGO
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Abstract
The present invention provides a composition for resist underlayer film formation comprising a tellurium-containing compound or a tellurium-containing resin.
Claims34
A composition for resist underlayer film formation comprising a tellurium-containing compound or a tellurium-containing resin.
Dependencies are inferred from the claim text.