Semiconductor device
AssigneeHitachi Automotive Systems, Ltd.
InventorsShinichirou WADA, Katsumi IKEGAYA
Life of this patent
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Abstract
Restraining a reduction in an electric current detection accuracy, which is due to the temperature difference between an output MOS transistor and a sense MOS transistor, and easing a limitation on the layout of the sense MOS transistor. A semiconductor device includes: an output MOS transistor that has an output transistor portion including a source, a gate, and a drain formed on a semiconductor chip, and outputs an electric current for driving an external load; and a sense MOS transistor that has a sense transistor portion including a source, a gate, and a drain formed on the semiconductor chip, and having a width equal to a transverse width of the output transistor portion, and that detects the electric current output from the output MOS transistor.
Claims12
A semiconductor device comprising:
- an output MOS transistor that has an output transistor portion including a source, a gate, and a drain formed on a semiconductor chip, and that outputs an electric current for driving an external load;
- and
- a sense MOS transistor that has a sense transistor portion including a source, a gate, and a drain formed on the semiconductor chip, and having a width equal to a transverse width of the output transistor portion, and that detects the electric current output from the output MOS transistor.
Dependencies are inferred from the claim text.