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US 2020/0221578 A1Published application
Method for forming circuits using seed layer and etchant composition for selective etching of seed layer
AssigneeInk Tec Co., Ltd.
InventorsKwang-Choon CHUNG, Byung Woong MOON, Su Han KIM, Jung Yoon MOON, Hyeon-Jun SEONG, Jae Rin KIM
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Abstract
The present invention relates to a method for forming a circuit using a seed layer. The method for forming a circuit using a seed layer according to the present invention, may realize a fine pitch, increase the adhesion of the circuit, and prevent the migration phenomenon.
Claims50
A method of forming a circuit using a seed layer, comprising:
- preparing a seed layer of a first conductive material;
- forming a pattern layer with a pattern groove, through which the seed layer is selectively exposed, on the seed layer;
- plating the pattern groove by filling a second conductive material into the pattern groove using a plating process;
- forming a resin layer on the pattern layer;
- and
- removing the seed layer,
- the first conductive material and the second conductive material being in different in material from each other.
4 more elements
A method of forming a circuit using a seed layer, comprising:
- forming a seed layer of silver (Ag) on one side of a release film;
- forming a seed protective layer on the seed layer;
- forming a pattern groove, through which the seed layer is selectively exposed, on the other side of the release film;
- plating the pattern groove by filling a conductive material of copper into the pattern groove;
- forming an insulation layer on the release film filled with the conductive material;
- and
- removing the seed layer by an etching solution capable of selectively removing the seed layer to separate the protective layer.
4 more elements
A method of forming a circuit using a seed layer, comprising:
- forming a resin layer on a seed layer of silver (Ag);
- forming a pattern by forming a pattern groove, through which the seed layer is selectively exposed, in the resin layer;
- plating the pattern groove by filling a conductive material of copper (Cu) into the pattern groove;
- forming an insulation layer on the resin layer;
- and
- removing the seed layer by an etching solution capable of selectively removing the seed layer.
3 more elements
A method of forming a circuit using a seed layer, comprising:
- forming a first resin layer on a seed layer of silver (Ag);
- forming a pattern by forming a pattern groove, through which the seed layer is selectively exposed, in the first resin layer;
- plating the pattern groove with a conductive material;
- removing the first resin layer;
- forming a second resin layer on the seed layer on which the conductive material is exposed as the first resin layer is removed, to prevent the conductive material from being exposed;
- and
- removing the seed layer by an etching solution capable of selectively removing the seed layer.
4 more elements
A method of forming a circuit using a seed layer, comprising:
- forming a seed layer of silver (Ag) on a release film;
- forming a protective layer on the seed layer;
- forming a foam-sheet layer on the protective layer;
- removing the release film;
- forming a pattern layer by applying a photosensitive material to the seed layer;
- forming a pattern groove on the pattern layer to selectively expose the seed layer;
- plating the pattern groove by filling a conductive material of copper (Cu) into the pattern groove;
- removing the pattern layer;
- forming a resin layer on the seed layer from which the pattern layer is removed;
- removing the foam-sheet layer;
- and
- removing the seed layer by an etching solution capable of selectively removing the seed layer to separate the protective layer.
9 more elements
A method of forming a circuit using a seed layer, comprising:
- forming a first seed layer of a first conductive material on each side of a carrier member;
- forming a first circuit pattern by forming a pattern layer with a pattern groove, through which the first seed layer is selectively exposed, on the first seed layer and by plating the pattern groove with a second conductive material;
- forming a resin layer on the first circuit pattern;
- and
- removing the first seed layer to separate the carrier member by etching the first seed layer,
- the first conductive material and the second conductive material being different in material from each other.
3 more elements
A method of forming a circuit using a seed layer, comprising:
- forming a first seed layer with a first conductive material of silver (Ag) on each side of a carrier member;
- forming a first circuit pattern with a second conductive material of copper (Cu) on the first seed layer;
- forming a second seed layer with the first conductive material of silver (Ag) on an inner side of a separately provided protective layer;
- forming a resin layer between the second seed layer and the first circuit pattern;
- adhering the second seed layer, the resin layer, and the first circuit pattern which are disposed in sequence;
- forming a via hole penetrating through the protective layer, the second seed layer, and the resin layer to expose a portion of the first circuit pattern;
- forming a current carrying portion electrically connecting the first circuit pattern and the second seed layer by filling a conductive material in the via hole;
- removing the protective layer;
- forming a second circuit pattern with the second conductive material on the second seed layer;
- and
- removing the first seed layer by an etching solution capable of dissolving only the first conductive material to separate the carrier member,
- the first conductive material and the second conductive material being different in material from each other.
9 more elements
Dependencies are inferred from the claim text.