Magnetoresistance effect element
AssigneeTDK Corporation
InventorTomoyuki SASAKI
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Abstract
A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a chemical formula of AB2Ox, and has a spinel structure in which cations are arranged in a disordered manner, A represents a divalent cation that is either Mg or Zn, and B represents a trivalent cation that includes a plurality of elements selected from the group consisting of Al, Ga, and In.
Claims11
A method of manufacturing a magnetoresistance effect element having a laminated body, in which a first ferromagnetic metal layer, a tunnel barrier layer and a second ferromagnetic metal layer are laminated in an order, the tunnel barrier layer being made of a compound in a spinel structure,
- the method comprising the step of forming the tunnel barrier layer by repeating a process of forming a metal layer and a process of oxidizing the metal layer, wherein
- the laminated body is provided on a substrate, and
- the process of oxidizing the metal layer is performed after cooling the substrate to −70ł C. to −30ł C.
Dependencies are inferred from the claim text.