Semiconductor device with single electron counting capability

A semiconductor device with single electron counting capability, comprising:

• at least two bipolar transistors with emitter, base and collector,
• a collector-to-base breakdown voltage,
• a current or voltage source electrically connected with the emitter, and
• a quenching component electrically connected with the collector, the bipolar transistor being configured for operation at a reverse collector-to-base voltage above the breakdown voltage, wherein
• one of the bipolar transistors comprising:
• a shallow well of a first type of conductivity in a deep well of an opposite second type of conductivity in the substrate, and
• a doped region of the second type of conductivity in the shallow well at the main surface, another one of the bipolar transistors comprising;
• a shallow well of a first type of conductivity in a deep well of an opposite second type of conductivity in the substrate, and
• a doped region of the first type of conductivity in the shallow well at the main surface.