Method of forming gratings
AssigneeApplied Materials, Inc.
InventorsJoseph C. OLSON, Ludovic GODET, Rutger MEYER TIMMERMAN THIJSSEN, Morgan EVANS, Jinxin FU
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Abstract
Embodiments of the disclosure generally relate to methods of forming gratings. The method includes depositing a resist material on a grating material disposed over a substrate, patterning the resist material into a resist layer, projecting a first ion beam to the first device area to form a first plurality of gratings, and projecting a second ion beam to the second device area to form a second plurality of gratings. Using a patterned resist layer allows for projecting an ion beam over a large area, which is often easier than focusing the ion beam in a specific area.
Claims20
A method of forming gratings, comprising:
- depositing a resist material on a grating material disposed over a substrate, the resist material having a first and second device area;
- patterning the resist material into a resist layer;
- projecting a first ion beam to the first device area for a first period of time to form a first plurality of gratings in the grating material, the first ion beam having a first angle to a surface of the substrate, the first ion beam having a first ion beam profile;
- and
- projecting a second ion beam to the second device area for a second period of time to form a second plurality of gratings in the grating material, the second ion beam having a second angle to the surface of the substrate, the second ion beam having a second ion beam profile,
- wherein at least one of the first ion beam profile and the second ion beam profile is not uniform.
A method of forming one or more pluralities of gratings, comprising:
- depositing a resist material on a grating material disposed over a substrate, the resist material having a first and second device area;
- patterning the resist material into a resist layer, wherein the patterning comprises pressing a mask against the resist material;
- projecting a first ion beam to the first device area for a first period of time to form a first plurality of gratings in the grating material, the first ion beam having a first angle to a surface of the substrate, the first ion beam having a first ion beam profile;
- and
- projecting a second ion beam to the second device area for a second period of time to form a second plurality of gratings in the grating material, the second ion beam having a second angle to the surface of the substrate, the second ion beam having a second ion beam profile,
- wherein at least one of the first ion beam profile and the second ion beam profile is not uniform.
A method of forming one or more pluralities of gratings, comprising:
- depositing a resist material on a grating material disposed over a substrate, the resist material having a first and second device area;
- patterning the resist material into a resist layer having a first pattern and a second pattern;
- projecting a first ion beam to the first device area for a first period of time to form a first plurality of gratings in the grating material, the first ion beam having a first angle to a surface of the substrate, the first ion beam having a first ion beam profile;
- and
- projecting a second ion beam to the second device area for a second period of time to form a second plurality of gratings in the grating material, the second ion beam having a second angle to the surface of the substrate, the second ion beam having a second ion beam profile;
- wherein
- the first pattern contains a first plurality of pattern features with the first angle to a surface of the first pattern,
- the second pattern contains a second plurality of pattern features with the second angle to the surface of the first pattern, and
- at least one of the first ion beam profile and the second ion beam profile is not uniform.
Dependencies are inferred from the claim text.