Hafnium-zirconium oxide (hzo) ferroelectric transducer and method of making the same

A one-port acoustic resonator, comprising:

• a substrate;
• a first conductive layer disposed on the substrate;
• a first titanium nitride (TiN) layer disposed on the first conductive layer;
• a one-port transducer formed on the first TiN layer, wherein the one-port transducer comprises:
• an HZO layer disposed on the first TiN layer,
• a molybdenum (Moly) layer disposed on the HZO layer, and
• a second TiN layer disposed on the Moly layer;
• and
• a second conductive layer disposed on the second TiN layer.

A method of fabricating a two-port acoustic resonator, comprising,

• providing a silicon-on-insulator substrate;
• depositing a first aluminum nitride (AlN) layer on the substrate, wherein the first AlN layer is a seed layer;
• depositing a first molybdenum (Moly) layer on the first AlN layer;
• depositing a second AlN layer on the first Moly layer;
• depositing a second Moly layer on the second AlN layer;
• patterning the second Moly layer to define a first transducer;
• depositing a first hafnium zirconium oxide (HZO) layer;
• depositing a first titanium nitride (TiN) layer on the HZO layer;
• depositing a first conductive film on the first TiN layer;
• patterning the first conductive film, the first TiN layer and the first HZO layer to form the first transducer;
• patterning the second AlN layer to define a second transducer;
• depositing a second conductive layer on the second transducer;
• and
• releasing the two-port acoustic resonator by etching a trench around and removing the substrate.