US 2020/0169248 A1 · HIGH POWER SILICON ON INSULATOR SWITCH

Abstract

An apparatus comprises a first series switch, a second series switch, a first shunt switch, a second shunt switch, a first DC blocking capacitor, and a second DC blocking capacitor. The first series switch may be coupled between a first RF port and a second RF port. The first shunt switch may be coupled between the first RF port and a first half supply voltage tab. The second series switch may be coupled between the second RF port and a third RF port. The second shunt switch may be coupled between the third RF port and a second half supply voltage tab. The first DC blocking capacitor may be coupled between the first half voltage tab and a circuit ground potential. The second DC blocking capacitor may be coupled between the second half supply voltage tab and the circuit ground potential.

Claims20

Dependent claims

An apparatus comprising:

a first series switch coupled between a first RF port and a second RF port;
a first shunt switch coupled between said first RF port and a first tab tied to a voltage level that is half of a supply voltage;
a second series switch coupled between said second RF port and a third RF port;
a second shunt switch coupled between said third RF port and a second tab tied to the voltage level that is half of said supply voltage;
a first DC blocking capacitor coupled between said first tab and a circuit ground potential;
and
a second DC blocking capacitor coupled between said second tab and said circuit ground potential.

4 more elements

Dependencies are inferred from the claim text.

Facts

Application

16/778,198Filed 31 Jan 2020

Priority

22 Nov 2017

Published

28 May 2020

Term ends

Not estimatedThe source records don’t support an estimate.

Classification10 codes

H03H 11/06
Frequency selective two-port networks: comprising means for compensation of loss
H03H 11/348
Networks for connecting several sources or loads working on different frequencies or frequency bands, to a common load or source: particularly…
H03K 17/04106
Without feedback from the output circuit to the control circuit: in field-effect transistor switches
H03K 17/102
Modifications for increasing the maximum permissible switched voltage: in field-effect transistor switches

Family

Application62/589,898Us provisional application · filed 22 Nov 2017

Application16/196,165Continuation · filed 20 Nov 2018

Application16/778,198Continuation

US 10,749,501 B2Related patent

US 2019/0158066 A1Published application

US 2020/0169248 A1This patent

From the US filing history. Foreign family members aren’t listed.

High power silicon on insulator switch

Life of this patent

High power silicon on insulator switch

Life of this patent

Abstract

Claims20