Cmos-mems structure and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJUNG-HUEI PENG, CHIA-HUA CHU, FEI-LUNG LAI, SHIANG-CHI LIN
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Abstract
The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, a metallization layer over the substrate, and a sensing structure over the metallization layer. The sensing structure includes an outgassing layer over the metallization layer, a patterned outgassing barrier in proximity to a top surface of the outgassing layer, the patterned outgassing barrier exposing a portion of the outgassing layer, and an electrode over the patterned outgassing barrier. The method for manufacturing the semiconductor device is also provided.
Claims20
A semiconductor device, comprising:
- a substrate;
- a metallization layer over the substrate;
- a sensing structure over the metallization layer, the sensing structure comprises:
- an outgassing layer over the metallization layer;
- a patterned outgassing barrier in proximity to a top surface of the outgassing layer, the patterned outgassing barrier exposing a portion of the outgassing layer;
- and
- an electrode over the patterned outgassing barrier.
A method for manufacturing a semiconductor device, comprising:
- providing a substrate;
- forming a metallization layer over the substrate;
- forming a first outgassing layer over the metallization layer;
- patterning an outgassing barrier over the first outgassing layer in a first sensing structure and a second sensing structure of the semiconductor device by a first mask, thereby exposing a portion of the first outgassing layer in the first sensing structure only;
- and
- forming an electrode over the outgassing barrier.
A semiconductor device, comprising:
- a substrate;
- a metallization layer over the substrate;
- and
- two sensing structures over the metallization layer, each of the two sensing structures comprises:
- an outgassing layer over the metallization layer;
- a patterned outgassing barrier in proximity to a top surface of the outgassing layer;
- and
- an electrode over the patterned outgassing barrier;
- wherein a portion of the outgassing layer is exposed in one of the two sensing structures.
Dependencies are inferred from the claim text.