US 2020/0132718 A1 · Depassivation Lithography by Scanning Tunneling Microscopy

Abstract

Methods, devices, and systems for forming atomically precise structures are provided. In some embodiments, the methods, devices, and systems of the present disclosure utilize a scanning tunneling microscope (STM) system to receive a sample having a surface to be patterned. The system positions a conductive tip over a pixel region of the surface. While the conductive tip remains laterally fixed relative to the surface, the system applies a bias voltage between the conductive tip and the surface such that a current between the conductive tip and the surface removes at least one atom from the pixel region. The system stops applying the voltage and current when it senses the removal of the at least one atom. The system then verifies that the at least one atom has been removed from the pixel region.

Claims20

Dependent claims

A method of patterning a surface, the method comprising:

receiving a sample having a surface to be patterned;
positioning a conductive tip of a scanning tunneling microscope over a pixel region of the surface, wherein the pixel region includes a plurality of dimers, each including a plurality of atoms of a first element and a plurality of atoms of a second element;
while the conductive tip remains laterally fixed relative to the surface, applying a bias voltage between the conductive tip and the surface such that a current between the conductive tip and the surface removes at least one atom from the pixel region;
detecting a signal indicating depassivation of the pixel region;
and
verifying that the at least one atom has been removed from the pixel region.

3 more elements

Dependencies are inferred from the claim text.

Depassivation Lithography by Scanning Tunneling Microscopy

Life of this patent

Depassivation Lithography by Scanning Tunneling Microscopy

Life of this patent

Abstract

Claims20