Semiconductor device and method for controlling semiconductor device

A method for controlling a semiconductor device which includes a main switching circuit implementing by an insulated gate first semiconductor element and an insulated gate second semiconductor element having a semiconductor region of a first conductivity type as a common region, including respectively a first well region of a second conductivity type and a second well region of a second conductivity type formed in an upper portion of the common region, the first semiconductor element being provided with a first surface electrode electrically connected to a power supply terminal on an upper surface of a first source region of the first conductivity type provided in an upper portion of the first well region, the second semiconductor element being provided with a second surface electrode electrically connected to an output terminal on an upper surface of a second source region provided in an upper portion of the second well region, the method comprising:

• applying a first drive signal to a control electrode of the first semiconductor element to control a turn-on and a turn-off of the first semiconductor element;
• and
• applying a second drive signal, independent of the first drive signal, to a control electrode of the second semiconductor element to control a turn-on and a turn-off of the second semiconductor element,
• wherein the turn-on and the turn-off by the second drive signal are switched during the first semiconductor element is in the turn-on.