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US 2020/0091909 A1Published application
Semiconductor device for radio frequency switch, radio frequency switch, and radio frequency module
AssigneeSony Corporation
InventorATSUSHI KURANOUCHI
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Abstract
Provided is a semiconductor device for radio frequency switch that includes an SOI substrate and a gate electrode. The SOI substrate includes a buried oxide film and a semiconductor layer on a carrier substrate. The gate electrode is provided on the semiconductor layer. The semiconductor layer includes a first area below the gate electrode and a second area other than the first area. A third area is provided in at least part of the second area. A fourth area is provided in at least part of the first area. The fourth area has a different thickness from a thickness of the third area.
Claims16
A semiconductor device, comprising:
- a Silicon On Insulator (SOI) substrate that includes a carrier substrate, a buried oxide film, and a semiconductor layer, wherein
- the buried oxide film is on the carrier substrate, and
- the semiconductor layer is on the buried oxide film;
- a gate electrode on the semiconductor layer;
- an interlayer insulating film on the gate electrode;
- a source electrode and a drain electrode, wherein each of the source electrode and the drain electrode is on the interlayer insulating film;
- and
- a source-side contact plug and a drain-side contact plug, wherein
- the source-side contact plug is configured to couple the source electrode to a source area, and
- the drain-side contact plug is configured to couple the drain electrode to a drain area.
7 more elements
Dependencies are inferred from the claim text.