System and method for anti-ambipolar heterojunctions from solution-processed semiconductors

A method, comprising:

• defining an n-type oxide over a dielectric layer covering a doped silicon wafer;
• defining a source electrode connected with the n-type oxide;
• defining a p-type nanomaterial;
• defining a drain electrode connected with the p-type nanomaterial;
• and
• defining a gate-tunable p-n heterojunction by overlapping the n-type oxide and the p-type nanomaterial, where the gate-tunable p-n heterojunction provides an anti-ambipolar transfer characteristic;
• providing a binary frequency shift keying circuit where the anti-ambipolar transfer characteristic requires only one p-n heterojunction in series with a resistor.