Dynamic high voltage (hv) level shifter with temperature compensation for high-side gate driver

A level shifter circuit comprising:

• a transistor;
• a first resistor electrically coupled from a first source/drain of the transistor to a power supply node;
• and
• a second resistor electrically coupled from a second source/drain of the transistor to a reference node;
• wherein the level shifter circuit is partially formed from a group III-V material.

A gate driver circuit comprising:

• a level shifter comprising a transistor, a first resistor, and a second resistor, wherein the first resistor is electrically coupled from a first source/drain of the transistor to a dynamic power supply node, and wherein the second resistor is electrically coupled from a second source/drain of the transistor to a reference node;
• and
• a bootstrap circuit configured to alternatingly change a voltage at the dynamic power supply node between a high voltage and a low voltage;
• wherein a resistance ratio between the first resistor and the second resistor is configured so a resistor voltage individual to and across the first resistor while the dynamic power supply node is at the high voltage is substantially the same as or less than the low voltage.