Bulk-acoustic wave resonator and method for manufacturing the same
AssigneeSamsung Electro-Mechanics Co., Ltd.
InventorsTae Hun LEE, Tae Yoon KIM, Moon Chul LEE, Chang Hyun LIM, Nam Jung LEE, Il Han LEE
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Abstract
A bulk-acoustic wave resonator includes a substrate, a first layer, a second layer, a membrane layer, and a resonance portion. The substrate includes a substrate protection layer. The first layer is disposed on the substrate protection layer. The second layer is disposed outside of the first layer. The membrane layer forms a cavity with the substrate protection layer and the first layer. The resonance portion is disposed on the membrane layer. Either one or both of the substrate protection layer and the membrane layer includes a protrusion disposed in the cavity.
Claims16
A bulk-acoustic wave resonator, comprising:
- a substrate including a substrate protection layer;
- a first layer disposed on the substrate protection layer;
- a second layer disposed outside of the first layer;
- a membrane layer forming a cavity with the substrate protection layer and the first layer;
- and
- a resonance portion disposed on the membrane layer,
- wherein either one or both of the substrate protection layer and the membrane layer comprises a protrusion disposed in the cavity.
A method for manufacturing a bulk-acoustic wave resonator, comprising:
- forming first and second sacrificial layers on a substrate, the first and second sacrificial layers being formed of materials to be etched by different etching solutions or etching gases, respectively;
- forming a membrane layer and a resonance portion above the first and second sacrificial layers;
- etching a portion of either one of the first and second sacrificial layers to form a column portion in a cavity;
- and
- etching the column portion.
Dependencies are inferred from the claim text.