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US 2020/0091886 A1Published application
Positions of release ports for sacrificial layer etching
AssigneeSkyworks Solutions, Inc.
InventorNobufumi Matsuo
Life of this patent
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Abstract
A film bulk acoustic wave resonator includes a piezoelectric film disposed over a cavity. The cavity is shaped as partial ellipse including first, second, and third vertices. The film bulk acoustic wave resonator further includes three release ports in positions that minimize etch time to remove all sacrificial material from within the cavity.
Claims26
A film bulk acoustic wave resonator comprising:
- a piezoelectric film disposed over a cavity, the cavity shaped as partial ellipse including first, second, and third vertices;
- and
- three release ports in positions that minimize etch time to remove all sacrificial material from within the cavity.
A method of forming a film bulk acoustic wave resonator comprising:
- disposing a piezoelectric film over a sacrificial material layer shaped as a partial ellipse including first, second, and third vertices to form a cavity below the piezoelectric film filled with the sacrificial material;
- forming release ports passing through the piezoelectric film and into the sacrificial material layer;
- and
- removing the sacrificial material layer by introducing an etchant for the sacrificial material through the release ports, the release ports being located in positions that minimize etch time to remove all of the sacrificial material.
1 more element
Dependencies are inferred from the claim text.