Radio frequency power amplifier and power amplifier module
AssigneeMurata Manufacturing Co., Ltd.
InventorsKenji SASAKI, Isao OBU, Takayuki TSUTSUI
Life of this patent
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Abstract
In a radio frequency power amplifier, a semiconductor chip includes at least one first transistor amplifying a radio frequency signal, a first external-connection conductive member connected to the first transistor, a bias circuit including a second transistor that applies a bias voltage to the first transistor, and a second external-connection conductive member connected to the second transistor. The second external-connection conductive member at least partially overlaps with the second transistor when viewed in plan.
Claims20
A radio frequency power amplifier including a semiconductor chip, the semiconductor chip comprising:
- at least one first transistor amplifying a radio frequency signal;
- a first external-connection conductive member connected to the first transistor;
- a bias circuit including a second transistor that applies a bias voltage to the first transistor;
- and
- a second external-connection conductive member connected to the second transistor,
- wherein the second external-connection conductive member at least partially overlaps with the second transistor when viewed in plan.
A power amplifier module comprising:
- a semiconductor chip;
- and
- a module substrate onto which the semiconductor chip is mounted,
- the semiconductor chip comprising:
- at least one first transistor amplifying a radio frequency signal;
- a first external-connection conductive member connected to the first transistor;
- a bias circuit including a second transistor that applies a bias voltage to the first transistor;
- and
- a second external-connection conductive member connected to the second transistor,
- wherein
- the second external-connection conductive member at least partially overlaps with
- the second transistor when viewed in plan, and
- the module substrate comprises:
- a dielectric portion made of a dielectric material;
- a first land and a second land that are opposed respectively to the first external-connection conductive member and the second external-connection conductive member and that are connected respectively to the first external-connection conductive member and the second external-connection conductive member;
- and
- a conductor pattern disposed as an inner layer in the dielectric portion, connected to the second land, and having a size and a shape containing a contour of the second land when viewed in plan.
Dependencies are inferred from the claim text.