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US 2020/0091812 A1Published application
Semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsTakashi TSUBAKIDANI, Shinji SAKAI
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Abstract
A semiconductor device includes: parasitic inductances connected to respective power transistors; and a drive circuit connected to connection points at which the power transistors are connected to the respective parasitic inductances, and driving the power transistors. The drive circuit insulates reference potentials of the power transistors at the connection points from each other.
Claims5
A semiconductor device comprising:
- a plurality of semiconductor switching elements constituting a multi-phase converter, and corresponding to respective phases;
- a plurality of parasitic inductances connected to the respective semiconductor switching elements;
- and
- a drive circuit connected to each of a plurality of connection points at which the semiconductor switching elements are connected to the respective parasitic inductances, and driving the semiconductor switching elements, wherein
- the drive circuit insulates reference potentials of the semiconductor switching elements at the connection points from one another.
2 more elements
Dependencies are inferred from the claim text.