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US 2020/0091684 A1Published application
Low voltage laser diodes on {20-21} gallium and nitrogen containing substrates
AssigneeSoraa Laser Diode, Inc.
InventorsJames W. Raring, Mathew Schmidt, Christiane Poblenz
Life of this patent
Estimating the term…
Abstract
A low voltage laser device having an active region configured for one or more selected wavelengths of light emissions.
Claims21
-20. (canceled)
A communication device comprising:
- a laser diode device comprising:
- a gallium and nitrogen containing material including a {20-21} crystalline surface region orientation;
- an n-type cladding material overlying the gallium and nitrogen containing material, the n-type cladding material being substantially free from an aluminum bearing material;
- an active region comprising at least three quantum wells and a plurality of barrier layers, each of the quantum wells having a thickness of 1 nm and greater, and each of the plurality of barrier layers having a thickness ranging from 1 nm to less than 3 nm, each adjacent pair of the quantum wells separated by one of the plurality of barrier layers;
- a p-type cladding material overlying the active region;
- a p-type material overlying the p-type cladding material;
- a laser stripe region overlying the crystalline surface region, the laser stripe region being aligned substantially in a projection of the c-direction, the laser stripe region comprising a first end and a second end;
- a first facet formed on the first end;
- and
- a second facet formed on the second end;
- and
- a package coupled to the laser diode device.
9 more elements
A communication device comprising:
- a laser diode device comprising:
- a gallium and nitrogen containing material including a {20-21} crystalline surface region orientation;
- an n-type cladding material overlying the gallium and nitrogen containing material, the n-type cladding material being substantially free from an aluminum bearing material;
- an active region comprising a plurality of quantum wells, and a plurality of barrier layers, each of the quantum wells having a thickness of 1 nm and greater, and each of the plurality of barrier layers having a p-type characteristic and a thickness ranging from lnm to less than 3nm, each adjacent pair of the quantum wells separated by one of the plurality of barrier layers;
- a p-type cladding material overlying the active region, the p-type cladding material being substantially free from AlGaN;
- a p-type material overlying the p-type cladding material;
- a laser stripe region overlying the crystalline surface region, the laser stripe region being aligned substantially in a projection of the c-direction, the laser stripe region comprising a first end and a second end;
- a first facet formed on the first end;
- and
- a second facet formed on the second end;
- and
- a package coupled to the laser diode device.
9 more elements
A communication device comprising:
- a laser diode device comprising:
- a gallium and nitrogen containing material including a {20-21} crystalline surface region orientation;
- an n-type cladding material overlying the gallium and nitrogen containing material
- an active region comprising a plurality of quantum wells and a plurality of barrier layers, each of the quantum wells having a thickness of 1 nm and greater, and each of the plurality of barrier layers having a thickness ranging from 1 nm to less than 3 nm, each adjacent pair of the quantum wells separated by one of the plurality of barrier layers;
- a p-type cladding material overlying the active region;
- a p-type material overlying the p-type cladding material;
- a laser stripe region overlying the crystalline surface region, the laser stripe region being aligned substantially in a projection of the c-direction, the laser stripe region comprising a first end and a second end;
- a first facet formed on the first end;
- and
- a second facet formed on the second end, wherein the active region is configured operably for a forward voltage of less than 7V for an output power of 60 mW and greater;
- and
- a package coupled to the laser diode device.
9 more elements
Dependencies are inferred from the claim text.