Semiconductor Laser Diode

A semiconductor laser diode comprising:

• a semiconductor layer sequence comprising an active layer having a main extension plane, configured to generate light in an active region during operation and configured to radiate the light via a light-outcoupling surface, wherein the active region extends from a rear surface opposite the light-outcoupling surface to the light-outcoupling surface along a longitudinal direction in the main extension plane;
• and
• a continuous contact structure directly disposed on a surface of the semiconductor layer sequence, wherein the contact structure comprises in at least a first contact region a first electrical contact material in direct contact with the surface region and in at least a second contact region a second electrical contact material in direct contact with the surface region,
• wherein the first and second contact regions adjoin one another, and
• wherein the first contact material and the second contact material form a continuous contact layer on which a bonding layer is located and/or one of the materials of the first contact material or the second contact material is part of a bonding layer covering the other of the materials of the first contact material or the second contact material.