Radiation detector and method for manufacturing the same
AssigneeKabushiki Kaisha Toshiba
InventorsIsao TAKASU, Hyangmi JUNG, Kohei NAKAYAMA, Yuko NOMURA, Rei HASEGAWA
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Abstract
According to one embodiment, a radiation detector includes a detection element. The detection element includes a first conductive layer, a second conductive layer, and an organic semiconductor layer provided between the first conductive layer and the second conductive layer. The organic semiconductor layer includes a first compound and a second compound. The first compound is bipolar. A thickness of the organic semiconductor layer is 50 μm or more.
Claims17
A radiation detector, comprising a detection element,
- the detection element including:
- a first conductive layer;
- a second conductive layer;
- and
- an organic semiconductor layer provided between the first conductive layer and the second conductive layer,
- the organic semiconductor layer including a first compound and a second compound, the first compound being bipolar,
- a thickness of the organic semiconductor layer being 50 μm or more.
A radiation detector, comprising a detection element,
- the detection element including:
- a first conductive layer;
- a second conductive layer;
- and
- an organic semiconductor layer provided between the first conductive layer and the second conductive layer,
- the organic semiconductor layer including a first compound and a second compound,
- the first compound including at least one selected from the group consisting of boron subnaphthalocyanine chloride and a derivative of boron naphthalocyanine chloride,
- the second compound including at least one selected from the group consisting of polyvinyl carbazole, polyfluorene, poly(9,9-dioctyl-9H-fluorene-2,7-diyl)-alt-2,2′-bithiophene-5,5′-diyl, and poly(9,9-dioctylfluorene-alt-benzothiadiazole),
- a thickness of the organic semiconductor layer being 50 μm or more.
A method for manufacturing a radiation detector, comprising:
- forming an organic semiconductor layer including a first compound and a second compound by applying pressure to a mixture, a plurality of particles including the first compound and a plurality of particles including the second compound being mixed in the mixture, the first compound being bipolar, a thickness of the organic semiconductor layer being 50 μm or more;
- and
- forming a first conductive layer and a second conductive layer electrically connected to the organic semiconductor layer, the organic semiconductor layer being provided between the first conductive layer and the second conductive layer.
Dependencies are inferred from the claim text.