High Reliability Phase-Change Material (PCM) Radio Frequency (RF) Switch Using Trap-Rich Region

A method comprising:

• etching a semiconductor substrate to form a semiconductor mesa on said semiconductor substrate;
• forming a trap-rich layer over said semiconductor mesa and said semiconductor substrate;
• removing said trap-rich layer from a top surface of said semiconductor mesa to form a trap-rich region adjacent to said semiconductor mesa;
• forming a phase-change material (PCM) radio frequency (RF) switch, wherein a heating element of said PCM RF switch is situated over said semiconductor mesa;
• forming an interconnect segment coupled to said PCM RF switch, wherein at least a portion of said interconnect segment is situated over said trap-rich region.

A method comprising:

• forming a mask over a semiconductor substrate;
• implant damaging an exposed surface of said semiconductor substrate to form a trap-rich region adjacent to a single crystal region of said semiconductor substrate;
• removing said mask;
• forming a phase-change material (PCM) radio frequency (RF) switch, wherein a heating element of said PCM RF switch is situated over said single crystal region;
• forming an interconnect segment coupled to said PCM RF switch, wherein at least a portion of said interconnect segment is situated over said trap-rich region.