Method for producing memristor electrode and resistive memory

Abstract

Embodiments of the present application provide a memristor electrode and a method for producing the same, an RRAM. The method includes: a. depositing a metal boride film on a substrate; b. performing annealing processing on the metal boride film; c. forming a photoresist layer on a surface of the metal boride film, and performing photolithography on the photoresist layer, to form a photolithographic pattern corresponding to a predetermined electrode pattern; and d. with the photolithographic pattern as a mask, etching the metal boride film by using an ion beam to form the metal boride film into the predetermined electrode pattern. According to the present disclosure, the memristor electrode produced using the metal boride is completely compatible with a CMOS producing process, and product performance of an RRAM including the memristor could be improved.

Dependencies are inferred from the claim text.