PCM RF Switch with PCM Contacts Having Slot Lower Portions

13:

• The method of claim 12, wherein said contact uniformity support layer maintains a substantially constant thickness of said passive segments of said PCM.

14:

• The method of claim 12, wherein said forming said slot lower portions of said PCM contacts comprises a punch-through etch of said contact uniformity support layer.

15:

• The method of claim 12, wherein said contact uniformity support layer is formed immediately after said PCM is formed so as to protect said PCM from atmospheric effects.

16:

• The method of claim 12, wherein said contact uniformity support layer comprises nitride.

17:

• The method of claim 12, wherein said contact uniformity support layer is a bi-layer that comprises oxide and nitride.

18:

• The method of claim 12, wherein said contact dielectric is further situated on sidewalls of said PCM.

19:

• The method of claim 12, wherein a thermally conductive and electrically insulating layer is situated under said PCM, and a thickness of said contact dielectric is significantly greater than a thickness of said thermally conductive and electrically insulating layer.

20:

• The method of claim 12, wherein said PCM comprises a material selected from the group consisting of germanium telluride (GeXTeY), germanium antimony telluride (GeXSbYTeZ), germanium selenide (GeXSeY), and any other chalcogenide.

21:

• The method of claim 12, wherein said contact dielectric comprises a material selected from the group consisting of SiO2, boron-doped SiO2, phosphorous-doped SiO2 and SiXNY.

22:

• The method of claim 19, wherein said thermally conductive and electrically insulating layer comprises a material selected from the group consisting of aluminum nitride (AlN), aluminum oxide (AlXOY), beryllium oxide (BeXOY), silicon carbide (SiC), diamond, and diamond-like carbon.

24:

• The method of claim 23, wherein said contact dielectric is further situated on sidewalls of said PCM.

25:

• The method of claim 23, wherein said contact dielectric comprises a material selected from the group consisting of SiO2, boron-doped SiO2, phosphorous-doped SiO2 and SiXNY.

26:

• The method of claim 23, wherein a thermally conductive and electrically insulating layer is situated under said PCM.

27:

• The method of claim 26, wherein said thermally conductive and electrically insulating layer comprises a material selected from the group consisting of aluminum nitride (AlN), aluminum oxide (AlXOY), beryllium oxide (BeXOY), silicon carbide (SiC), diamond, and diamond-like carbon.

28:

• The method of claim 23, wherein said PCM comprises a material selected from the group consisting of germanium telluride (GeXTeY), germanium antimony telluride (GeXSbYTeZ), germanium selenide (GeXSeY), and any other chalcogenide.

30:

• The method of claim 29, wherein said contact uniformity support layer comprises nitride.

31:

• The method of claim 29, wherein said contact uniformity support layer is a bi-layer that comprises oxide and nitride.