Novel phase change random access memory device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Hsu YEN, Yu-Chuan Hsu, Chen-Hui Yang
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Abstract
A method for making a memory device, includes: forming a first dielectric layer over a bottom electrode; forming a first void extending through the first dielectric layer to expose a portion of an upper boundary of the bottom electrode; forming a first conductive structure lining along respective sidewalls of the first void and the exposed portion of the upper boundary of the bottom electrode; filling the first void with the first dielectric layer; and forming a phase change material layer over the first dielectric layer to cause the phase change material layer to contact at least a portion of a sidewall of the first conductive structure.
Claims20
A method, comprising:
- forming a first dielectric layer over a bottom electrode;
- forming a first void extending through the first dielectric layer to expose a portion of an upper boundary of the bottom electrode;
- forming a first conductive structure lining along respective sidewalls of the first void and the exposed portion of the upper boundary of the bottom electrode;
- filling the first void with the first dielectric layer;
- and
- forming a phase change material layer over the first dielectric layer to cause the phase change material layer to contact at least a portion of a sidewall of the first conductive structure.
A method, comprising:
- providing a first dielectric layer;
- forming a first conductive column structure extending entirely through the first dielectric layer, wherein the first conductive column structure comprises a shell portion wrapping a core structure filled with a dielectric material and an end portion that is coupled to a first end of the shell portion and disposed below the core structure, wherein the shell portion comprises a conductive layer;
- and
- forming a first phase change material layer over the first dielectric layer, wherein a lower boundary of the first phase change material layer contacts at least a first portion of a second end of the shell portion, the second end being opposite the first end.
A method, comprising:
- forming a bottom electrode in a first dielectric layer;
- forming a phase change material layer in a second dielectric layer;
- and
- forming a heater structure in a third dielectric layer and extending entirely through the third dielectric layer between the bottom electrode and the phase change material layer, wherein the heater structure lines a trench thereby causing a first portion of the heater structure to contact the phase change material layer at a first end and wrap a dielectric material directly disposed below the phase change material layer,
- wherein the heater structure further comprises a second portion coupled to a second end of the first portion and disposed below the wrapped dielectric material, the second end being opposite the first end, and
- wherein the first portion of the heater structure comprises an inner boundary and an outer boundary that each form a circumference of a circular shape when viewed from a top perspective.
Dependencies are inferred from the claim text.