Apparatus and methods of fabricating a magneto-resistive random access memory (mram) device
AssigneeApplied Materials, Inc.
InventorsCHI CHING, RENU WHIG, RONGJUN WANG
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Abstract
Methods and apparatus for forming a magnetic tunnel element are provided herein. A method of forming a magnetic tunnel element includes: depositing a magnetic layer atop a cobalt-chromium seed layer; and depositing a tunnel layer atop the magnetic layer to form a magnetic tunnel element, wherein the magnetic tunnel element has a TMR greater than 100. For example, a cobalt/platinum material or one or more layers thereof may be deposited directly atop a cobalt-chromium seed layer to produce improved devices.
Claims20
A method of forming a magnetic tunnel element comprising:
- depositing a magnetic layer atop a cobalt-chromium seed layer;
- and
- depositing a tunnel layer atop the magnetic layer to form a magnetic tunnel element, wherein the magnetic tunnel element has a TMR greater than 100.
A magnetic tunnel element comprising:
- a magnetic layer atop a cobalt-chromium seed layer;
- and
- a tunnel layer atop the magnetic layer to form a magnetic tunnel element, wherein the magnetic tunnel element has a TMR greater than 100.
A computer readable medium, having instructions stored thereon which, when executed, cause a method of forming a magnetic tunnel element comprising:
- depositing a magnetic layer atop a cobalt-chromium seed layer;
- and depositing a tunnel layer atop the magnetic layer to form a magnetic tunnel element, wherein the magnetic tunnel element has a TMR greater than 100.
Dependencies are inferred from the claim text.