Magnetoresistive memory device
AssigneeToshiba Memory Corporation
InventorYasuyuki SONODA
Life of this patent
Estimating the term…
Abstract
According to one embodiment, a magnetoresistive memory device includes: a bottom structure; a layer stack on the bottom structure; a first insulating layer on a sidewall of the layer stack; a first spacer layer on the first insulating layer; a second insulating layer on the first spacer layer; a second spacer layer on the second insulating layer; and a third insulating layer on the second spacer layer. The layer stack includes a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer between the first ferromagnetic layer and the second ferromagnetic layer.
Claims19
A magnetoresistive memory device comprising:
- a bottom structure;
- a layer stack on the bottom structure, the layer stack including a first ferromagnetic layer, a second ferromagnetic layer, and a nonmagnetic layer between the first ferromagnetic layer and the second ferromagnetic layer;
- a first insulating layer on a sidewall of the layer stack;
- a first spacer layer on the first insulating layer;
- a second insulating layer on the first spacer layer;
- a second spacer layer on the second insulating layer;
- and
- a third insulating layer on the second spacer layer.
A method of manufacturing a magnetoresistive memory device comprising:
- forming a second conductive layer on a first conductive layer;
- forming a first layer stack on the second conductive layer, the layer stack including a ferromagnetic layer;
- performing a first etching to the first layer stack to form a second layer stack, the first etching not etching the first conductive layer;
- forming a first insulating layer on a side surface of the second layer stack;
- forming a first spacer layer on the first insulating layer;
- etching the second conductive layer to remove the second conductive layer in part from an upper surface of the second conductive layer to a lower surface of the second conductive layer;
- forming a second insulating layer on the first spacer layer;
- forming a second spacer layer on the second insulating layer;
- forming a third insulating layer on the second spacer.
Dependencies are inferred from the claim text.