Radiation-Emitting Semiconductor Chip

A radiation-emitting semiconductor chip comprising:

• a carrier comprising:
• a first main surface and a second main surface opposite to the first main surface;
• an n-doped layer and a p-doped layer forming a pn-junction;
• and
• a vertical region starting from the first main surface and running parallel to side faces of the carrier, wherein the vertical region is n-doped, p-doped or electrically insulating, and wherein the vertical region extends within a boundary region of the carrier and completely encloses a central volume region of the carrier;
• an epitaxial semiconductor layer sequence having an active zone configured to generate electromagnetic radiation during operation, the epitaxial semiconductor layer sequence being located at the first main surface of the carrier;
• and
• two electrical contacts disposed on a front side of the semiconductor chip.

A radiation-emitting semiconductor chip comprising:

• a carrier comprising:
• a first main surface and a second main surface opposite to the first main surface;
• an n-doped layer and a p-doped layer forming a pn-junction;
• and
• a vertical region which, starting from the first main surface of the carrier, runs parallel to side faces of the carrier, the vertical region being n-doped, p-doped or electrically insulating;
• an epitaxial semiconductor layer sequence having an active zone configured to generate electromagnetic radiation during operation, the epitaxial semiconductor layer sequence being located at the first main surface of the carrier;
• and
• two electrical contacts disposed on a front side of the semiconductor chip.