Wavelength converted light emitting device

A structure comprising:

• a semiconductor light emitting device comprising a first surface, an oppositely positioned second surface, a p-contact, and a n-contact, the p-contact and the n-contact are positioned adjacent to the first surface, the semiconductor light emitting device configured to emit a first light having a first peak wavelength through the second surface;
• and
• a semiconductor wavelength converting element disposed adjacent to the second surface of the semiconductor light emitting device and in a path of the first light emitted by the semiconductor light emitting device and comprising
• one or more light emitting layers of a material that absorbs light at the first peak wavelength and in response emits a second light having a spectrum with a second peak wavelength and a full width half maximum of 25 nm or less;
• a total thickness of light emitting layers in the semiconductor wavelength converting element is between 10 nm and 3 μm.