Method of producing a semiconductor component

A method of producing a semiconductor component, comprising:

• applying an auxiliary carrier at a first side of a semiconductor body, the auxiliary carrier having a first lateral coefficient of thermal expansion, and
• applying a connection carrier at a second side of the semiconductor body facing away from the auxiliary carrier, the connection carrier having a second lateral coefficient of thermal expansion, wherein
• the semiconductor body is grown on a growth substrate different from the auxiliary carrier,
• the first and the second lateral coefficient of thermal expansion differ by at most 50%, and
• the growth substrate is removed prior to application of the auxiliary carrier.

A method of producing a semiconductor component, comprising:

• applying an auxiliary carrier at a first side of a semiconductor body, the auxiliary carrier having a first lateral coefficient of thermal expansion, and
• applying a connection carrier at a second side of the semiconductor body facing away from the auxiliary carrier, the connection carrier having a second lateral coefficient of thermal expansion, wherein
• the semiconductor body is grown on a growth substrate different from the auxiliary carrier,
• the first and the second lateral coefficient of thermal expansion differ by at most 50%, and
• prior to application of the auxiliary carrier, an intermediate carrier is applied to the second side of the semiconductor body.